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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1566 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide SOA (safe operating area) Complement to type 2SD2395 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature Collector-emitter voltage SEM E Open base Ta=25ae Open emitter OND IC TOR UC MAX -60 -50 -5 -3 -4.5 2 UNIT V V V A A Open collector PC W TC=25ae 25 150 -55~150 ae ae Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA ;IB=0 IC=-50|I IE=-50|I A ;IE=0 A ;IC=0 MIN -50 -60 -5 TYP. 2SB1566 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT MAX UNIT V V V IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 100 -1.0 -1.5 -1.0 -1.0 |I |I V V A A IN Output capacitance Transition frequency hFE Classifications E 100-200 F ANG CH 160-320 EMIC ES IC=-0.5A ; VCE=-5V OND TOR UC 320 40 60 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1566 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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